LOGO
Total0Items      Cart Subtotal:$0
LOGO
JAN2N3810L

Images are for reference only

Mfr. #:
JAN2N3810L
Batch:
new
Description:
Transistor - Bipolar (BJT) - Array 2 PNP (Dual) 60V 50mA 350mW Through Hole TO-78-6
Datasheet:
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
frequently asked question
Product AttributeAttribute Value
Manufacturer Microchip Technology
Series Military, MIL-PRF-19500/336
Packaging Bulk
Transistor Type 2 PNP (Dual)
Current - Collector (Ic) (Max) 50mA
Voltage - Collector Emitter Breakdown (Max) 60V
Vce Saturation Voltage Drop (Max) 250mV @ 100μA, 1mA
Current - Collector Cutoff (Max) 10μA (ICBO)
DC Current Gain (hFE) (Min) 150 @ 1mA, 5V
Power - Max 350mW
Frequency - Transition -
Operating Temperature -65°C ~ 200°C (TJ)
Mounting Type Through Hole
Package/Case TO-78-6 Metal Can
Supplier Device Package TO-78-6
Other product information

Advantage price,JAN2N3810L in stock can be shipped on the same day

In Stock: Inquiry
Qty.Unit PriceExt. Price
100+ $29.7276 $2972.76
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
Inquiry
Minimum:
1
MPQ:
100
Multiples:
1
Copyright ©2025 Gokey