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SI4435DYTRPBF
SI4435DYTRPBFReference image

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Mfr. #:
SI4435DYTRPBF
Batch:
new
Description:
Surface Mount Type P Channel 30 V 8A (Tc) 2.5W (Ta) 8-SO
Datasheet:
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Specifications
frequently asked question
Product AttributeAttribute Value
Infineon Technologies
HEXFET?
Tape and Reel (TR)
Available
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 30 V
Current at 25°C - Continuous Drain (Id) 8A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 4.5V, 10V
On-Resistance (max) at Id, Vgs 20 milliohms @ 8A, 10V
Vgs(th) (max) at Id 1V @ 250μA
Gate Charge?(Qg) (max) at Vgs 60 nC @ 10 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) 2320 pF @ 15 V
FET function -
Power dissipation (max) 2.5W (Ta)
Operating temperature -55°C ~ 150°C (TJ)
Mounting type Surface mount
Supplier device package 8-SO
Package/case 8-SOIC (0.154", 3.90mm width)
SI4435
Other product information

Advantage price,SI4435DYTRPBF in stock can be shipped on the same day

In Stock: 41250
Qty.Unit PriceExt. Price
1+ $1.2208 $1.2208
10+ $0.9950 $9.95
100+ $0.7740 $77.4
500+ $0.6561 $328.05
1000+ $0.5345 $534.5
2000+ $0.5031 $1006.2
Enter Quantity:
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
41250
Minimum:
1
MPQ:
1
Multiples:
1
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