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IPD60N10S4L12ATMA1
IPD60N10S4L12ATMA1Reference image

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Mfr. #:
IPD60N10S4L12ATMA1
Batch:
new
Description:
Surface mount N channel 100 V 60A (Tc) 94W (Tc) PG-TO252-3-313
Datasheet:
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Specifications
frequently asked question
Product AttributeAttribute Value
Infineon Technologies
Automotive, AEC-Q101, HEXFET?
Tape and Reel (TR)
Available
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 100 V
Current at 25°C - Continuous Drain (Id) 60A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 4.5V, 10V
On-Resistance (max) at Id, Vgs 12 mOhm @ 60A, 10V
Vgs(th) (max) at Id 2.1V @ 46μA
Gate Charge?(Qg) (max) at Vgs 49 nC @ 10 V
Vgs (max) ±16V
Input capacitance (Ciss) (max) 3170 pF @ 25 V
FET function -
Power dissipation (max) 94W (Tc)
Operating temperature -55°C ~ 175°C (TJ)
Mounting type Surface mount
Supplier device package PG-TO252-3-313
Package/case TO-252-3, DPak (2-lead tab), SC-63
IPD60N10
Other product information

Advantage price,IPD60N10S4L12ATMA1 in stock can be shipped on the same day

In Stock: 71727
Qty.Unit PriceExt. Price
1+ $1.5530 $1.553
10+ $1.2945 $12.945
100+ $1.0305 $103.05
500+ $0.9304 $465.2
Enter Quantity:
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
71727
Minimum:
1
MPQ:
1
Multiples:
1
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