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NJX1675PDR2G
NJX1675PDR2GReference image

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Mfr. #:
NJX1675PDR2G
Mfr.:
Batch:
new
Description:
Transistors - Bipolar (BJT) - Arrays NPN, PNP 30V 3A 100MHz, 120MHz 2W Surface Mount 8-SOIC
Datasheet:
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Specifications
frequently asked question
Product AttributeAttribute Value
onsemi
-
Packaging Tape and Reel (TR)
Transistor Type NPN, PNP
Current - Collector (Ic) (Max) 3A
Voltage - Collector-Emitter Breakdown (Max) 30V
Vce Saturation Voltage Drop (Max) for Different Ib, Ic 115mV @ 200mA, 2A, 170mV @ 200mA, 2A
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) for Different Ic, Vce 180 @ 1A, 2V
Power - Max 2W
Frequency - Transition 100MHz, 120MHz
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package/Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
Other product information

Advantage price,NJX1675PDR2G in stock can be shipped on the same day

In Stock: Inquiry
Qty.Unit PriceExt. Price
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Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
Inquiry
Minimum:
1
MPQ:
Multiples:
1
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