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FDI045N10A-F102
FDI045N10A-F102Reference image

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Mfr. #:
FDI045N10A-F102
Mfr.:
Batch:
new
Description:
Through Hole N Channel 100 V 120A (Tc) 263W (Tc) I2PAK (TO-262)
Datasheet:
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Specifications
frequently asked question
Product AttributeAttribute Value
Manufacturer onsemi
Series PowerTrench?
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 100 V
Current at 25°C - Continuous Drain (Id) 120A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 4.5 milliohms @ 100A, 10V
Vgs(th) (max) at Id 4V @ 250μA
Gate Charge?(Qg) (max) at Vgs 74 nC @ 10 V
Vgs (max) ±20V
Various Vds Input Capacitance (Ciss) (max) 5270 pF @ 50 V
FET Function -
Power Dissipation (max) 263W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK (TO-262)
Package/Case TO-262-3, Long Lead, I2Pak, TO-262AA
Other product information

Advantage price,FDI045N10A-F102 in stock can be shipped on the same day

In Stock: 157
Qty.Unit PriceExt. Price
1+ $5.2276 $5.2276
50+ $4.1476 $207.38
100+ $3.5550 $355.5
500+ $3.1600 $1580
1000+ $2.7058 $2705.8
2000+ $2.5478 $5095.6
5000+ $2.4443 $12221.5
Enter Quantity:
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
157
Minimum:
1
MPQ:
1
Multiples:
1
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