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FDP19N40
FDP19N40Reference image

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Mfr. #:
FDP19N40
Mfr.:
Batch:
new
Description:
Through hole N channel 400 V 19A (Tc) 215W (Tc) TO-220-3
Datasheet:
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Specifications
frequently asked question
Product AttributeAttribute Value
Manufacturer onsemi
Series UniFET?
Packaging Tube
FET Type N-channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 400 V
Current at 25°C - Continuous Drain (Id) 19A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 240 mOhm @ 9.5A, 10V
Vgs(th) (max) at Id 5V @ 250μA
Gate Charge?(Qg) (max) at Vgs 40 nC @ 10 V
Vgs (max) ±30V
Various Vds Input Capacitance (Ciss) (Max) 2115 pF @ 25 V
FET Function -
Power Dissipation (Max) 215 W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package/Case TO-220-3
Other product information

Advantage price,FDP19N40 in stock can be shipped on the same day

In Stock: 3350
Qty.Unit PriceExt. Price
1+ $3.3042 $3.3042
10+ $2.9699 $29.699
100+ $2.4335 $243.35
Enter Quantity:
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
3350
Minimum:
1
MPQ:
1
Multiples:
1
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