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2N7000-D26Z
2N7000-D26ZReference image

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Mfr. #:
2N7000-D26Z
Mfr.:
Batch:
new
Description:
Through hole N channel 60 V 200mA (Ta) 400mW (Ta) TO-92-3
Datasheet:
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Specifications
frequently asked question
Product AttributeAttribute Value
Manufacturer onsemi
Series -
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 60 V
Current at 25°C - Continuous Drain (Id) 200 mA (Ta)
Drive Voltage (Rds On Max, Rds On Min) 4.5 V, 10 V
On-Resistance (Max) at Different Id, Vgs 5 Ohm @ 500 mA, 10 V
Vgs(th) (Max) at Different Id 3 V @ 1 mA
Vgs (Max) ±20 V
Input Capacitance (Ciss) (Max) at Different Vds 50 pF @ 25 V
FET Function -
Power dissipation (max) 400mW (Ta)
Operating temperature -55°C ~ 150°C (TJ)
Mounting type Through hole
Supplier device package TO-92-3
Package/case TO-226-3, TO-92-3 (TO-226AA) formed leads
Other product information

Advantage price,2N7000-D26Z in stock can be shipped on the same day

In Stock: 9321
Qty.Unit PriceExt. Price
1+ $0.5046 $0.5046
10+ $0.3881 $3.881
100+ $0.2325 $23.25
500+ $0.2152 $107.6
1000+ $0.1464 $146.4
Enter Quantity:
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
9321
Minimum:
1
MPQ:
1
Multiples:
1
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