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IRFB38N20DPBF
IRFB38N20DPBFReference image

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Mfr. #:
IRFB38N20DPBF
Batch:
new
Description:
Through hole N channel 200 V 43A (Tc) 3.8W (Ta), 300W (Tc) TO-220AB
Datasheet:
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Specifications
frequently asked question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series HEXFET?
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 200 V
Current at 25°C - Continuous Drain (Id) 43A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 54 mOhm @ 26A, 10V
Vgs(th) (max) at Id 5V @ 250μA
Gate Charge?(Qg) (max) at Vgs 91 nC @ 10 V
Vgs (max) ±20V
Various Vds Input Capacitance (Ciss) (Max) 2900 pF @ 25 V
FET Function -
Power Dissipation (Max) 3.8W (Ta), 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package/Case TO-220-3
Other product information

Advantage price,IRFB38N20DPBF in stock can be shipped on the same day

In Stock: 1992
Qty.Unit PriceExt. Price
1+ $3.3747 $3.3747
50+ $2.7089 $135.445
100+ $2.2289 $222.89
500+ $1.8859 $942.95
1000+ $1.6002 $1600.2
2000+ $1.5202 $3040.4
5000+ $1.4630 $7315
Enter Quantity:
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
1992
Minimum:
1
MPQ:
1
Multiples:
1
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