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STW35N65DM2
STW35N65DM2Reference image

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Mfr. #:
STW35N65DM2
Batch:
new
Description:
Through Hole N Channel 650 V 32A (Tc) 250W (Tc) TO-247-3
Datasheet:
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Specifications
frequently asked question
Product AttributeAttribute Value
Manufacturer STMicroelectronics
Series MDmesh? DM2
Package Device
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 650 V
Current at 25°C - Continuous Drain (Id) 32A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 110 milliohms @ 16A, 10V
Vgs(th) (max) at Id 5V @ 250μA
Gate Charge?(Qg) (max) at Vgs 56.3 nC @ 10 V
Vgs (max) ±25V
Various Vds Input Capacitance (Ciss) (Max) 2540 pF @ 100 V
FET Function -
Power Dissipation (Max) 250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package/Case TO-247-3
Other product information

Advantage price,STW35N65DM2 in stock can be shipped on the same day

In Stock: 938
Qty.Unit PriceExt. Price
1+ $7.1876 $7.1876
10+ $6.0345 $60.345
100+ $4.8813 $488.13
600+ $4.3390 $2603.4
1200+ $3.7152 $4458.24
2400+ $3.4983 $8395.92
Enter Quantity:
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
938
Minimum:
1
MPQ:
1
Multiples:
1
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