LOGO
Total0Items      Cart Subtotal:$0
LOGO
IPI041N12N3GAKSA1
IPI041N12N3GAKSA1Reference image

Images are for reference only

Mfr. #:
IPI041N12N3GAKSA1
Batch:
new
Description:
Through hole N channel 120 V 120A (Tc) 300W (Tc) PG-TO262-3
Datasheet:
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
frequently asked question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series OptiMOS?
Package Device
FET Type N-channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 120 V
Current at 25°C - Continuous Drain (Id) 120 A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10 V
On-Resistance (max) at Id, Vgs 4.1 mOhm @ 100 A, 10 V
Vgs(th) (max) at Id 4 V @ 270 μA
Gate Charge?(Qg) (max) at Vgs 211 nC @ 10 V
Vgs (max) ±20 V
Various Vds Input Capacitance (Ciss) (max) 13800 pF @ 60 V
FET Function -
Power Dissipation (max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3
Package/Case TO-262-3, Long Lead, I2Pak, TO-262AA
Other product information

Advantage price,IPI041N12N3GAKSA1 in stock can be shipped on the same day

In Stock: 484
Qty.Unit PriceExt. Price
1+ $7.5235 $7.5235
50+ $5.9638 $298.19
100+ $5.1119 $511.19
500+ $4.5439 $2271.95
1000+ $3.8907 $3890.7
2000+ $3.6635 $7327
Enter Quantity:
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
484
Minimum:
1
MPQ:
1
Multiples:
1
Copyright ©2025 Gokey