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STW18NM60N
STW18NM60NReference image

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Mfr. #:
STW18NM60N
Batch:
new
Description:
Through Hole N Channel 600 V 13A (Tc) 110W (Tc) TO-247-3
Datasheet:
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Specifications
frequently asked question
Product AttributeAttribute Value
Manufacturer STMicroelectronics
Series MDmesh? II
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 600 V
Current at 25°C - Continuous Drain (Id) 13A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 285 mOhm @ 6.5A, 10V
Vgs(th) (max) at Id 4V @ 250μA
Gate Charge?(Qg) (max) at Vgs 35 nC @ 10 V
Vgs (max) ±25V
Various Vds Input Capacitance (Ciss) (Max) 1000 pF @ 50 V
FET Function -
Power Dissipation (Max) 110W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package/Case TO-247-3
Other product information

Advantage price,STW18NM60N in stock can be shipped on the same day

In Stock: 535
Qty.Unit PriceExt. Price
1+ $8.1732 $8.1732
30+ $6.4795 $194.385
120+ $5.5539 $666.468
510+ $4.9368 $2517.768
1020+ $4.2271 $4311.642
2010+ $3.9803 $8000.403
Enter Quantity:
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
535
Minimum:
1
MPQ:
1
Multiples:
1
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