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2N7637-GA
2N7637-GAReference image

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Mfr. #:
2N7637-GA
Batch:
new
Description:
Through Hole 650 V 7A (Tc) (165°C) 80W (Tc) TO-257
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Specifications
frequently asked question
Product AttributeAttribute Value
Manufacturer GeneSiC Semiconductor
Series -
Packaging Bulk
FET Type -
Technology SiC (Silicon Carbide Junction Transistor)
Drain Source Voltage (Vdss) 650 V
Current at 25°C - Continuous Drain (Id) 7A (Tc) (165°C)
Drive Voltage (Rds On Max, Rds On Min) -
On Resistance (max) at Id, Vgs 170 mOhm @ 7A
Vgs(th) (max) at Id -
Vgs (max) -
Input Capacitance (Ciss) (max) at Vds 720 pF @ 35 V
FET Function -
Power dissipation (max) 80W (Tc)
Operating temperature -55°C ~ 225°C (TJ)
Mounting type Through hole
Supplier Device package TO-257
Package/case TO-257-3
Other product information

Advantage price,2N7637-GA in stock can be shipped on the same day

In Stock: Inquiry
Qty.Unit PriceExt. Price
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Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
Inquiry
Minimum:
1
MPQ:
Multiples:
1
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