LOGO
Total0Items      Cart Subtotal:$0
LOGO
GA06JT12-247
GA06JT12-247Reference image

Images are for reference only

Mfr. #:
GA06JT12-247
Batch:
new
Description:
Through Hole 1200 V 6A (Tc) (90°C) TO-247AB
Datasheet:
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
frequently asked question
Product AttributeAttribute Value
Manufacturer GeneSiC Semiconductor
Series -
Packaging Tubes
FET Type -
Technology SiC (Silicon Carbide Junction Transistor)
Drain Source Voltage (Vdss) 1200 V
Current at 25°C - Continuous Drain (Id) 6A (Tc) (90°C)
Drive Voltage (Rds On Max, Rds On Min) -
On Resistance (Max) at Different Id, Vgs 220 mOhm @ 6A
Vgs(th) (Max) at Different Id -
Vgs (Max) -
FET Function -
Power Dissipation (Max) -
Operating Temperature 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AB
Package/Case TO-247-3
Other product information

Advantage price,GA06JT12-247 in stock can be shipped on the same day

In Stock: Inquiry
Qty.Unit PriceExt. Price
Please contact for inquiry
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
Inquiry
Minimum:
1
MPQ:
Multiples:
1
Copyright © 2016-2025 Shenzhen GoKey Chip Technology Co., Ltd.